Investigation of Radio Frequency Low Noise Amplifier Design using Source Pull Techniques at 2.4GHz

In this paper, e-pHEMT transistor noise performance is investigated at the transistor-antenna interface of a 2.45 GHz narrow band front-end. The research focuses on the trade-off between acceptable gain and Noise Figure under the constraint of minimum power consumption specifically 2.6V and 9mA (23.4mW). The design method optimises the matching at the input of the transistor using source pull techniques, combined with adaptive auto tuning components. Fabrication and experimental tests of prototype hardware are compared with simulations. Improvement is reported between two designs: 15 dB Gain, 1 dB Noise figure (NF) and 12.5 dB gain, 0.8 dB Noise figure. The 1-dB input compression point is -6.3 dBm. A passive Active Integrated Antenna (AIA) is intended to match the interface of the particular low noise transistor.